Display device and method of manufacturing the same

ABSTRACT

A display device according to an exemplary embodiment includes: a substrate, a thin film transistor on the substrate, a pixel electrode connected to the thin film transistor, a common electrode on the pixel electrode to be spaced apart from the pixel electrode while a plurality of microcavities are interposed between the common electrode and the pixel electrode, a roof layer on the common electrode, an alignment layer on the pixel electrode and beneath the common electrode and including a photosensitive material, a liquid crystal layer filling the microcavities, and an encapsulation layer on the roof layer to seal the microcavities.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to and the benefit of Korean PatentApplication No. 10-2014-0046964 filed in the Korean IntellectualProperty Office on Apr. 18, 2014, the entire contents of which areincorporated herein by reference.

BACKGROUND

(a) Technical Field

The present application relates to a display device and a method ofmanufacturing the same, and more particularly, to a display device and amethod of manufacturing the same, which can simplify a process.

(b) Description of the Related Art

A liquid crystal display is one of the most common types of flat paneldisplays currently in use, and includes two display panels with fieldgenerating electrodes such as a pixel electrode and a common electrode,and a liquid crystal layer interposed therebetween. The liquid crystaldisplay displays an image by applying a voltage to a field generatingelectrode to generate an electric field on the liquid crystal layer,determine alignment of liquid crystal molecules of the liquid crystallayer therethrough, and control polarization of incident light.

The two display panels constituting the liquid crystal display may beformed of a thin film transistor array panel and a counter displaypanel. In the thin film transistor array panel, a gate line transferringa gate signal and a data line transferring a data signal are formed tocross each other, and a thin film transistor connected to the gate lineand the data line, a pixel electrode connected to the thin filmtransistor, and the like may be formed. A light blocking member, a colorfilter, a common electrode, and the like may be formed in the counterdisplay panel. If necessary, the light blocking member, the colorfilter, and the common electrode may be formed in the thin filmtransistor array panel.

However, in an existing liquid crystal display, there are problems inthat two substrates are essentially used and constituent elements areformed on each of the two substrates, and thus a display device is heavyand thick, a cost thereof is high, and a process time is long.

The above information disclosed in this Background section is only forenhancement of understanding of the background and therefore it maycontain information that does not form the prior art that is alreadyknown in this country to a person of ordinary skill in the art.

SUMMARY

Embodiments have been made in an effort to provide a display device anda method of manufacturing the same, which can reduce a weight, athickness, cost, and a process time by manufacturing the display deviceby using one substrate.

Further, embodiments been made in an effort to provide a display deviceand a method of manufacturing the same, which can simplify a process.

An exemplary embodiment provides a display device including: asubstrate, a thin film transistor on the substrate, a pixel electrodeconnected to the thin film transistor, a common electrode on the pixelelectrode to be spaced apart from the pixel electrode while a pluralityof microcavities are interposed between the common electrode and thepixel electrode, a roof layer on the common electrode, an alignmentlayer on the pixel electrode and beneath the common electrode andincluding a photosensitive material, a liquid crystal layer filling themicrocavities, and an encapsulation layer on the roof layer to seal themicrocavities.

The alignment layer may further include a siloxane resin.

The photosensitive material may be formed of at least any one of a PAC(photoactive compound), a PAG (photoacid generator), and aphotoinitiator.

The alignment layer may include a sulfur component and a chlorinecomponent.

The display device according to the exemplary embodiment may furtherinclude a color filter positioned beneath the pixel electrode, and aninsulating layer between the color filter and the pixel electrode andformed of an organic insulating material, in which the pixel electrodemay be directly on the insulating layer.

The display device according to the exemplary embodiment may furtherinclude a light blocking member between the plurality of microcavities,in which the light blocking member may be positioned directly beneaththe encapsulation layer.

The light blocking member may be positioned on the pixel electrode andthe insulating layer.

Another exemplary embodiment provides a display device including: asubstrate, a thin film transistor on the substrate, a pixel electrodeconnected to the thin film transistor, a common electrode on the pixelelectrode to be spaced apart from the pixel electrode while a pluralityof microcavities are interposed between the common electrode and thepixel electrode, a roof layer on the common electrode, an alignmentlayer on the pixel electrode and beneath the common electrode, analtered layer between the pixel electrode and the alignment layer andbetween the common electrode and the alignment layer, a liquid crystallayer filling the microcavities, and an encapsulation layer on the rooflayer to seal the microcavities.

The display device according to the exemplary embodiment may furtherinclude a color filter positioned beneath the pixel electrode, and aninsulating layer between the color filter and the pixel electrode andformed of an organic insulating material, in which the pixel electrodemay be directly on the insulating layer.

The display device may further include a light blocking member betweenthe plurality of microcavities, in which the light blocking member maybe positioned directly beneath the encapsulation layer.

Yet another exemplary embodiment provides a method of manufacturing adisplay device, including: forming a thin film transistor on asubstrate, forming a pixel electrode to be connected to the thin filmtransistor, forming a sacrificial layer on the pixel electrode, forminga common electrode on the sacrificial layer, forming a roof layer on thecommon electrode, patterning the common electrode and the roof layer toexpose a portion of the sacrificial layer, removing the sacrificiallayer to form a microcavity between the pixel electrode and the commonelectrode, injecting a liquid crystal material into the microcavity toform a liquid crystal layer, and forming an encapsulation layer to covera portion where the microcavity is exposed and to seal the microcavity,in which in the removing of the sacrificial layer, a portion of thesacrificial layer, which contacts with the pixel electrode and thecommon electrode, remains to form an alignment layer.

The sacrificial layer may include a photosensitive material, a siloxaneresin, and a reaction group.

The photosensitive material may be formed of at least any one of a PAC(photoactive compound), a PAG (photoacid generator), and aphotoinitiator.

The reaction group may be formed of an alkyl group or a methyl group.

The alignment layer may include a sulfur component and a chlorinecomponent.

The removing of the sacrificial layer may include a process of supplyinga stripper solution to a portion where the sacrificial layer is exposed.

The removing of the sacrificial layer may not include an oxygen ashingprocess.

Still another exemplary embodiment provides a method of manufacturing adisplay device, including: forming a thin film transistor on asubstrate, forming a pixel electrode to be connected to the thin filmtransistor, forming a sacrificial layer on the pixel electrode, forminga common electrode on the sacrificial layer, forming a roof layer on thecommon electrode, patterning the common electrode and the roof layer toexpose a portion of the sacrificial layer, removing the sacrificiallayer to form a microcavity between the pixel electrode and the commonelectrode, injecting an alignment material into the microcavity to forman alignment layer on the pixel electrode and beneath the commonelectrode, injecting a liquid crystal material into the microcavity toform a liquid crystal layer, and forming an encapsulation layer to covera portion where the microcavity is exposed and to seal the microcavity,in which in the removing of the sacrificial layer, a portion of thesacrificial layer, which contacts with the pixel electrode and thecommon electrode, remains to form an altered layer.

The altered layer may be positioned between the pixel electrode and thealignment layer and between the common electrode and the alignmentlayer.

The removing of the sacrificial layer may include a process of supplyinga stripper solution to a portion where the sacrificial layer is exposedbut may not include an oxygen ashing process.

According to the exemplary embodiments, the display device and themethod of manufacturing the same have the following effects.

In the display device and the method of manufacturing the same accordingto the exemplary embodiment, it is possible to reduce a weight, athickness, cost, and a process time by manufacturing the display deviceby using one substrate.

Further, it is possible to simplify a process by omitting a process ofremoving an altered layer generated by altering a sacrificial layer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a top plan view illustrating a display device according to anexemplary embodiment.

FIG. 2 is an equivalent circuit diagram of one pixel of the displaydevice according to an exemplary embodiment.

FIG. 3 is a layout view illustrating a portion of the display deviceaccording to an exemplary embodiment.

FIG. 4 is a cross-sectional view of the display device according to anexemplary embodiment, which is taken along line IV-IV of FIG. 3.

FIG. 5 is a cross-sectional view of the display device according to anexemplary embodiment, which is taken along line V-V of FIG. 3.

FIGS. 6, 7, 8, 9, 10 are process cross-sectional views illustrating amethod of manufacturing the display device according to an exemplaryembodiment.

FIG. 11 is a view illustrating the display device where a sacrificiallayer is formed by a general photoresist.

FIG. 12 is a view illustrating the display device according to anexemplary embodiment.

FIGS. 13 and 14 are cross-sectional views illustrating the displaydevice according to an exemplary embodiment.

FIGS. 15, 16, 17, 18 are process cross-sectional views illustrating themethod of manufacturing the display device according to an exemplaryembodiment.

DETAILED DESCRIPTION OF THE EMBODIMENTS

The inventive concept will be described more fully hereinafter withreference to the accompanying drawings, in which exemplary embodimentsare shown. As those skilled in the art would realize, the describedembodiments may be modified in various different ways, all withoutdeparting from the spirit or scope of the inventive concept.

In the drawings, the thickness of layers, films, panels, regions, etc.,are exaggerated for clarity. Like reference numerals designate likeelements throughout the specification. It will be understood that whenan element such as a layer, film, region, or substrate is referred to asbeing “on” another element, it can be directly on the other element orintervening elements may also be present. In contrast, when an elementis referred to as being “directly on” another element, there are nointervening elements present.

First, a display device according to an exemplary embodiment will beschematically described below with reference to FIG. 1.

FIG. 1 is a top plan view illustrating the display device according tothe exemplary embodiment.

The display device according to the exemplary embodiment includes asubstrate 110 made of a material such as glass or plastic.

A microcavity 305 covered by a roof layer 360 is formed on the substrate110. The roof layer 360 extends in a row direction, and a plurality ofmicrocavities 305 are formed beneath one roof layer 360.

The microcavities 305 may be disposed in a matrix form, a first valleyV1 is positioned between the microcavities 305 adjacent in a columndirection, and a second valley V2 is positioned between themicrocavities 305 adjacent in a row direction.

A plurality of roof layers 360 are separated from each other while thefirst valley V1 is interposed therebetween. The microcavities 305 maynot be covered by the roof layer 360 but may be exposed to the outsideat a portion that is in contact with the first valley V1. These arecalled injection holes 307 a and 307 b.

The injection holes 307 a and 307 b are formed at both edges of themicrocavity 305. The injection holes 307 a and 307 b are formed of afirst injection hole 307 a and a second injection hole 307 b, the firstinjection hole 307 a is formed to expose a lateral surface of a firstedge of the microcavity 305, and the second injection hole 307 b isformed to expose a lateral surface of a second edge of the microcavity305. The lateral surface of the first edge and the lateral surface ofthe second edge of the microcavity 305 face each other.

Each roof layer 360 is formed to be spaced apart from the substrate 110between the adjacent second valleys V2, thus forming the microcavity305. That is, the roof layer 360 is formed to cover residual lateralsurfaces other than the lateral surfaces of the first edge and thesecond edge in which the injection holes 307 a and 307 b are formed.

The aforementioned structure of the display device according to theexemplary embodiment is just an example, and various modifications arefeasible. For example, a disposal form of the microcavity 305, the firstvalley V1, and the second valley V2 can be changed, a plurality of rooflayers 360 may be connected to each other in the first valley V1, and aportion of each roof layer 360 may be formed to be spaced apart from thesubstrate 110 in the second valley V2, so that the adjacentmicrocavities 305 may be connected to each other.

Hereinafter, one pixel of the display device according to the exemplaryembodiment will be schematically described below with reference to FIG.2.

FIG. 2 is an equivalent circuit diagram of one pixel of the displaydevice according to an exemplary embodiment.

The display device according to the exemplary embodiment includes aplurality of signal lines 121, 171 h, and 171 l and a pixel PX connectedthereto. Although not illustrated in the drawings, a plurality of pixelsPX may be disposed in a matrix form including a plurality of pixel rowsand a plurality of pixel columns.

Each pixel PX may include a first sub-pixel PXa and a second sub-pixelPXb. The first sub-pixel PXa and the second sub-pixel PXb may bevertically disposed. In this case, the first valley V1 may be positionedin a pixel row direction between the first sub-pixel PXa and the secondsub-pixel PXb, and the second valley V2 may be positioned between aplurality of pixel columns.

The signal lines 121, 171 h, and 171 l include a gate line 121transferring a gate signal, and a first data line 171 h and a seconddata line 171 l transferring different data voltages.

A first switching element Qh connected to the gate line 121 and thefirst data line 171 h is formed, and a second switching element Qlconnected to the gate line 121 and the second data line 171 l is formed.

A first liquid crystal capacitor Clch connected to the first switchingelement Qh is formed in the first sub-pixel PXa, and a second liquidcrystal capacitor Clcl connected to the second switching element Ql isformed in the second sub-pixel PXb.

A first terminal of the first switching element Qh is connected to thegate line 121, a second terminal thereof is connected to the first dataline 171 h, and a third terminal thereof is connected to the firstliquid crystal capacitor Clch.

A first terminal of the second switching element Ql is connected to thegate line 121, a second terminal thereof is connected to the second dataline 171 l, and a third terminal thereof is connected to the secondliquid crystal capacitor Clcl.

Reviewing an operation of the liquid crystal display according to theexemplary embodiment, if a gate-on voltage is applied to the gate line121, the first switching element Qh and the second switching element Qlconnected thereto are turned-on, and the first and second liquid crystalcapacitors Clch and Clcl are charged by the different data voltagestransferred through the first and second data lines 171 h and 171 l. Thedata voltage transferred by the second data line 171 l is lower than thedata voltage transferred by the first data line 171 h. Accordingly, thesecond liquid crystal capacitor Clcl may be charged by the voltage thatis lower than that of the first liquid crystal capacitor Clch to improvelateral visibility.

Hereinafter, the structure of one pixel of the liquid crystal displayaccording to the exemplary embodiment will be described with additionalreference to FIGS. 3 to 5.

FIG. 3 is a layout view illustrating a portion of the display deviceaccording to an exemplary embodiment, FIG. 4 is a cross-sectional viewof the display device according to an exemplary embodiment, which istaken along line IV-IV of FIG. 3, and FIG. 5 is a cross-sectional viewof the display device according to an exemplary embodiment, which istaken along line V-V of FIG. 3.

Referring to FIGS. 3 to 5, the gate line 121 and a first gate electrode124 h and a second gate electrode 124 l protruding from the gate line121 are formed on the substrate 110.

The gate line 121 extends in a first direction, and transfers a gatesignal. The gate line 121 is positioned between the two microcavities305 adjacent in a column direction. That is, the gate line 121 ispositioned in the first valley V1. The first gate electrode 124 h andthe second gate electrode 124 l protrude to an upper side of the gateline 121 on the top plan view. The first gate electrode 124 h and thesecond gate electrode 124 l may be connected to each other to form oneprotrusion portion. However, embodiments are not limited thereto, andprotrusion shapes of the first gate electrode 124 h and the second gateelectrode 124 l can be variously modified.

A storage electrode line 131 and storage electrodes 133 and 135protruding from the storage electrode line 131 may be further formed onthe substrate 110.

The storage electrode line 131 extends in a direction that is parallelwith the gate line 121, and is formed to be spaced apart from the gateline 121. A predetermined voltage may be applied to the storageelectrode line 131. The storage electrode 133 protruding over thestorage electrode line 131 is formed to surround the edge of the firstsub-pixel PXa. The storage electrode 135 protruding down the storageelectrode line 131 is formed to be adjacent to the first gate electrode124 h and the second gate electrode 124 l.

A gate insulating layer 140 is formed on the gate line 121, the firstgate electrode 124 h, the second gate electrode 124 l, the storageelectrode line 131, and the storage electrodes 133 and 135. The gateinsulating layer 140 may be formed of an inorganic insulating materialsuch as silicon nitride (SiNx) and silicon oxide (SiOx). Further, thegate insulating layer 140 may be formed of a single layer or amultilayer.

A first semiconductor 154 h and a second semiconductor 154 l are formedon the gate insulating layer 140. The first semiconductor 154 h may bepositioned on the first gate electrode 124 h, and the secondsemiconductor 154 l may be positioned on the second gate electrode 124l. The first semiconductor 154 h may be formed beneath the first dataline 171 h, and the second semiconductor 154 l may be formed beneath thesecond data line 171 l. The first semiconductor 154 h and the secondsemiconductor 154 l may be formed of amorphous silicon, polycrystallinesilicon, metal oxide, or the like.

Ohmic contact members (not illustrated) may be further formed on thefirst semiconductor 154 h and the second semiconductor 154 l,respectively. The ohmic contact members may be made of a material suchas silicide or n+ hydrogenated amorphous silicon to which an n-typeimpurity is doped at a high concentration.

The first data line 171 h, the second data line 171 l, a first sourceelectrode 173 h, a first drain electrode 175 h, a second sourceelectrode 173 l, and a second drain electrode 175 l are formed on thefirst semiconductor 154 h, the second semiconductor 154 l, and the gateinsulating layer 140.

The first data line 171 h and the second data line 171 l, sometimescollectively or individually referred to as a data line 171, transferthe data signal, and extend in a second direction to cross the gate line121 and the storage electrode line 131. The data line 171 is positionedbetween the two microcavities 305 adjacent in a row direction. That is,the data line 171 is positioned in the second valley V2.

The first data line 171 h and the second data line 171 l transfer thedifferent data voltages. For example, the data voltage transferred bythe second data line 171 l is lower than the data voltage transferred bythe first data line 171 h.

The first source electrode 173 h is formed to protrude from the firstdata line 171 h over the first gate electrode 124 h, and the secondsource electrode 173 l is formed to protrude from the second data line171 l over the second gate electrode 124 l. Each of the first drainelectrode 175 h and the second drain electrode 175 l includes one wideend portion and the other rod-shaped end portion. The wide end portionsof the first drain electrode 175 h and the second drain electrode 175 loverlap with the storage electrode 135 protruding down the storageelectrode line 131. The rod-shaped end portions of the first drainelectrode 175 h and the second drain electrode 175 l are partiallysurrounded by the first source electrode 173 h and the second sourceelectrode 173 l, respectively.

The first and second gate electrodes 124 h and 124 l, the first andsecond source electrodes 173 h and 173 l, and the first and second drainelectrodes 175 h and 175 l form first and second thin film transistors(ITT) Qh and Ql together with the first and second semiconductors 154 hand 154 l. A channel of the first and second thin film transistors Qhand Ql is formed in each of the semiconductors 154 h and 154 l betweeneach of the source electrodes 173 h and 173 l and each of the drainelectrodes 175 h and 175 l.

A passivation layer 180 is formed on the first data line 171 h, thesecond data line 171 l, the first source electrode 173 h, the firstdrain electrode 175 h, the first semiconductor 154 h exposed between thefirst source electrode 173 h and the first drain electrode 175 h, thesecond source electrode 173 l, the second drain electrode 175 l, and thesecond semiconductor 154 l exposed between the second source electrode173 l and the second drain electrode 175 l. The passivation layer 180may be formed of an organic insulating material or the inorganicinsulating material, and formed of a single layer or a multilayer.

A color filter 230 is formed in each pixel PX on the passivation layer180.

Each color filter 230 may display any one of primary colors such asthree primary colors of red, green, and blue colors. The color filter230 is not limited to the three primary colors of red, green and bluecolors, and may display cyan, magenta, yellow, and white-based colors.

The color filter 230 may not be formed in the first valley V1. Theadjacent color filters 230 displaying different colors may overlap witheach other in the second valley V2.

A first insulating layer 240 may be further formed on the color filter230. The first insulating layer 240 may be formed of the organicinsulating material, and may serve to planarize the color filters 230.

A first contact hole 181 h which extends to and through which the wideend portion of the first drain electrode 175 h is exposed and a secondcontact hole 181 l which extends to and through which the wide endportion of the second drain electrode 175 l is exposed are formed in thepassivation layer 180 and the first insulating layer 240.

A pixel electrode 191 is formed on the first insulating layer 240. Thepixel electrode 191 may be formed of a transparent metal material suchas indium tin oxide (ITO) and indium zinc oxide (IZO).

The pixel electrode 191 includes a first sub-pixel electrode 191 h and asecond sub-pixel electrode 191 l separated from each other while thegate line 121 and the storage electrode line 131 are interposedtherebetween. The first sub-pixel electrode 191 h and the secondsub-pixel electrode 191 l are disposed on and beneath the pixel PX basedon the gate line 121 and the storage electrode line 131. That is, thefirst sub-pixel electrode 191 h and the second sub-pixel electrode 191 lare separated from each other while the first valley V1 is interposedtherebetween, the first sub-pixel electrode 191 h is positioned in thefirst sub-pixel PXa, and the second sub-pixel electrode 191 l ispositioned in the second sub-pixel PXb.

The first sub-pixel electrode 191 h is connected through the firstcontact hole 181 h to the first drain electrode 175 h, and the secondsub-pixel electrode 191 l is connected through the second contact hole181 l to the second drain electrode 175 l. Accordingly, when the firstthin film transistor Qh and the second thin film transistor Ql are in anon state, the first sub-pixel electrode 191 h and the second sub-pixelelectrode 191 l receive the different data voltages from the first drainelectrode 175 h and the second drain electrode 175 l, respectively.

An entire shape of each of the first sub-pixel electrode 191 h and thesecond sub-pixel electrode 191 l is a quadrangle, and the firstsub-pixel electrode 191 h and the second sub-pixel electrode 191 linclude cross-shaped stem portions formed of horizontal stem portions193 h and 193 l and vertical stem portions 192 h and 192 l crossing thehorizontal stem portions 193 h and 193 l. Further, the first sub-pixelelectrode 191 h and the second sub-pixel electrode 191 l include aplurality of fine branch portions 194 h and 194 l.

The pixel electrode 191 is divided into four sub-regions by thehorizontal stem portions 193 h and 193 l and the vertical stem portions192 h and 192 l. The fine branch portions 194 h and 194 l obliquelyextend from the horizontal stem portions 193 h and 193 l and thevertical stem portions 192 h and 192 l, and the extension directionthereof may form an angle of approximately 45° or 135° with the gateline 121 or the horizontal stem portions 193 h and 193 l. Further, theextension directions of the fine branch portions 194 h and 194 l of thetwo adjacent sub-regions may be orthogonal to each other.

In the present exemplary embodiment, the first sub-pixel electrode 191 hand the second sub-pixel electrode 191 l may further include outskirtstem portions surrounding outskirts of the first sub-pixel PXa and thesecond sub-pixel PXb.

The aforementioned disposal type of the pixels, the structure of thethin film transistor, and the shape of the pixel electrode are just anexample, the embodiments are not limited thereto, and variousmodifications are feasible.

A light blocking member 220 is formed on the pixel electrode 191 and thefirst insulating layer 240. The light blocking member 220 is formed of amaterial that can block light, and thus may serve to prevent lightleakage.

The light blocking member 220 is positioned in the first valley V1. Thethin film transistors Qh and Ql are positioned in the first valley V1,and the light blocking member 220 is formed to overlap with the thinfilm transistors Qh and Ql. Moreover, the light blocking member 220 maybe formed to further overlap with the gate line 121 and the storageelectrode line 131. Particularly, the light blocking member 220 isformed to cover the first contact hole 181 h and the second contact hole181 l formed for connection of the thin film transistors Qh and Ql andthe pixel electrode 191.

An inorganic insulating layer for protecting the first insulating layer240 may be further formed on the first insulating layer 240, and aninorganic insulating layer for protecting the light blocking member 220may be further formed on the light blocking member 220. However, in thepresent exemplary embodiment, since there is little concern about damageto the first insulating layer 240 and the light blocking member 220,this inorganic insulating layer may not be formed. Accordingly, in thepresent exemplary embodiment, the pixel electrode 191 is formed directlyon the first insulating layer 240. Further, the light blocking member220 is positioned directly beneath an encapsulation layer 390 as will bedescribed later.

A common electrode 270 is formed on the pixel electrode 191 to be spacedapart from the pixel electrode 191 by a predetermined distance. Amicrocavity 305 is formed between the pixel electrode 191 and the commonelectrode 270. That is, the microcavity 305 is surrounded by the pixelelectrode 191 and the common electrode 270. The common electrode 270 isformed in a row direction, and is formed on the microcavity 305 and inthe second valley V2. The common electrode 270 is formed to cover anupper surface and a lateral surface of the microcavity 305. A width andan area of the microcavity 305 may be variously modified according to asize and a resolution of the display device.

However, the embodiments are not limited thereto, and the commonelectrode 270 may be formed while the insulating layer is interposedbetween the common electrode 270 and the pixel electrode 191. In thiscase, the microcavity 305 is not formed between the pixel electrode 191and the common electrode 270, but the microcavity 305 may be formed onthe common electrode 270.

The common electrode 270 may be formed of a transparent metal materialsuch as indium tin oxide (ITO) and indium zinc oxide (IZO). Apredetermined voltage may be applied to the common electrode 270, and anelectric field may be formed between the pixel electrode 191 and thecommon electrode 270.

Alignment layers 11 and 21 are formed on the pixel electrode 191 andbeneath the common electrode 270.

The alignment layers 11 and 21 include a photosensitive material. Thephotosensitive material is a material causing a chemical change if lightis irradiated thereon, and is formed of a photosensitive resin such as aPAC (photoactive compound), a PAG (photoacid generator), and aphotoinitiator. The photosensitive resin is reacted with light to causea change of dissolution or solidification. The photosensitive resinwhere a polymer at a portion which light reaches is insolubilized and aresist remains is called a negative type photoresist, and thephotosensitive resin where the polymer at the portion which lightreaches is solubilized and the resist is removed is called a positivetype photoresist.

The PAC has the following structure of Chemical Formula 1. Accordingly,the alignment layers 11 and 21 may include a sulfur component and achlorine component.

The alignment layers 11 and 21 have a form where various kinds of sidechain groups are attached to a main chain, and form a pretilt to controlarrangement of liquid crystals. The main chains and the side chaingroups of the alignment layers 11 and 21 may have the followingstructure of Chemical Formula 2.

The alignment layers 11 and 21 further include a siloxane resin, and themain chain may be formed of siloxane. Siloxane has a chain typestructure where silicon atoms and oxygen atoms are alternately bonded. Areaction group R is bonded to siloxane, and the reaction group R mayform the side chain group. The reaction group R may be formed of analkyl group, a methyl group, or the like.

The alignment layers 11 and 21 include the first alignment layer 11 andthe second alignment layer 21. The first and second alignment layers 11and 21 may be connected at a lateral wall of an edge of the microcavity305.

The first alignment layer 11 is formed on the pixel electrode 191. Thefirst alignment layer 11 may be formed directly on the first insulatinglayer 240 not covered by the pixel electrode 191.

The second alignment layer 21 is formed beneath the common electrode 270to face the first alignment layer 11.

A liquid crystal layer formed of liquid crystal molecules 310 is formedin the microcavity 305 positioned between the pixel electrode 191 andthe common electrode 270. The liquid crystal molecules 310 have negativedielectric anisotropy, and may be erected in a vertical direction to thesubstrate 110 in a state where the electric field is not applied. Thatis, vertical alignment may be obtained.

The first sub-pixel electrode 191 h and the second sub-pixel electrode191 l to which the data voltage is applied generate an electric fieldtogether with the common electrode 270 to determine a direction of theliquid crystal molecules 310 positioned in the microcavity 305 betweenthe two electrodes 191 and 270. Luminance of light passing through theliquid crystal layer is changed according to the thus determineddirection of the liquid crystal molecules 310.

A second insulating layer 350 may be further formed on the commonelectrode 270. The second insulating layer 350 may be formed of theinorganic insulating material such as silicon nitride (SiNx) and siliconoxide (SiOx), and may be omitted if necessary.

The roof layer 360 is formed on the second insulating layer 350. Theroof layer 360 may be formed of an organic material. The roof layer 360is formed in a row direction, and is formed on the microcavity 305 andin the second valley V2. The roof layer 360 is formed to cover an uppersurface and a lateral surface of the microcavity 305. The roof layer 360may be hardened by a curing process to maintain a shape of themicrocavity 305. The roof layer 360 is formed to be spaced apart fromthe pixel electrode 191 while the microcavity 305 is interposed betweenthe roof layer 360 and the pixel electrode 191.

The common electrode 270 and the roof layer 360 are formed to expose thelateral surface of the edge of the microcavity 305, and portions wherethe microcavity 305 is not covered by the common electrode 270 and theroof layer 360 are called the injection holes 307 a and 307 b. Theinjection holes 307 a and 307 b include the first injection hole 307 awhich extends to and through which the lateral surface of the first edgeof the microcavity 305 is exposed, and the second injection hole 307 bwhich extends to and through which the lateral surface of the secondedge of the microcavity 305 is exposed. The first edge and the secondedge are the edges facing each other, and for example, on the top planview, the first edge may be an upper edge of the microcavity 305 and thesecond edge may be a lower edge of the microcavity 305. Since themicrocavity 305 is exposed by the injection holes 307 a and 307 b, analigning agent, a liquid crystal material, or the like may be injectedthrough the injection holes 307 a and 307 b into the microcavity 305.

A third insulating layer 370 may be further formed on the roof layer360. The third insulating layer 370 may be formed of the inorganicinsulating material such as silicon nitride (SiNx) and silicon oxide(SiOx). The third insulating layer 370 may be formed to cover an uppersurface and a lateral surface of the roof layer 360. The thirdinsulating layer 370 serves to protect the roof layer 360 formed of anorganic material, and may be omitted if necessary.

The encapsulation layer 390 is formed on the third insulating layer 370.The encapsulation layer 390 is formed to cover the injection holes 307 aand 307 b through which a portion of the microcavity 305 is exposed tothe outside. That is, the encapsulation layer 390 may seal themicrocavity 305 so that the liquid crystal molecules 310 formed in themicrocavity 305 are not discharged to the outside. Since theencapsulation layer 390 is in contact with the liquid crystal molecules310, it is preferable that the encapsulation layer 390 be formed of amaterial not reacted with the liquid crystal molecules 310. For example,the encapsulation layer 390 may be formed of parylene or the like.

As described above, the encapsulation layer 390 is formed directly onthe light blocking member 220 in the first valley V1.

The encapsulation layer 390 may be formed of a multilayer such as adouble layer or a triple layer. The double layer is formed of two layersformed of different materials. The triple layer is formed of threelayers, and materials of the adjacent layers are different from eachother. For example, the encapsulation layer 390 may include a layerformed of the organic insulating material and a layer formed of theinorganic insulating material.

Although not illustrated in the drawings, a polarizer may be furtherformed on upper and lower surfaces of the display device. The polarizermay be formed of a first polarizer and a second polarizer. The firstpolarizer may be attached to a lower surface of the substrate 110, andthe second polarizer may be attached onto the encapsulation layer 390.

Hereinafter, a method of manufacturing the display device according tothe exemplary embodiment will be described below with reference to FIGS.6 to 10. Moreover, a description will be given with reference to FIGS. 1to 5 together.

FIGS. 6 to 10 are process cross-sectional views illustrating the methodof manufacturing the display device according to the exemplaryembodiment.

First, as illustrated in FIG. 6, the gate line 121 extending in a firstdirection, and the first gate electrode 124 h and the second gateelectrode 124 l protruding from the gate line 121 are formed on thesubstrate 110 formed of glass, plastic, or the like. The first gateelectrode 124 h and the second gate electrode 124 l may be connected toeach other to form one protrusion portion.

Further, the storage electrode line 131 and the storage electrodes 133and 135 protruding from the storage electrode line 131 may be formedtogether to be spaced apart from the gate line 121. The storageelectrode line 131 extends in a direction that is parallel to the gateline 121. The storage electrode 133 protruding over the storageelectrode line 131 is formed to surround an edge of a first sub-pixelregion PXa, and the storage electrode 135 protruding down the storageelectrode line 131 may be formed to be adjacent to the first gateelectrode 124 h and the second gate electrode 124 l.

Subsequently, the gate insulating layer 140 is formed by using theinorganic insulating material such as silicon nitride (SiNx) and siliconoxide (SiOx) on the gate line 121, the first gate electrode 124 h, thesecond gate electrode 124 l, the storage electrode line 131, and thestorage electrodes 133 and 135. The gate insulating layer 140 may beformed of a single layer or a multilayer.

Subsequently, a semiconductor material such as amorphous silicon,polycrystalline silicon, or metal oxide is deposited on the gateinsulating layer 140, and then patterned to form the first semiconductor154 h and the second semiconductor 154 l. The first semiconductor 154 hmay be formed to be positioned on the first gate electrode 124 h, andthe second semiconductor 154 l may be formed to be positioned on thesecond gate electrode 124 l.

Subsequently, the metal material is deposited, and then patterned toform the first data line 171 h and the second data line 171 l extendingin a second direction. The metal material may be formed of a singlelayer or a multilayer.

Further, the first source electrode 173 h protruding from the first dataline 171 h over the first gate electrode 124 h, and the first drainelectrode 175 h spaced apart from the first source electrode 173 h areformed together. Further, the second source electrode 173 l protrudingfrom the second data line 171 l over the second gate electrode 124 l,and the second drain electrode 175 l spaced apart from the second sourceelectrode 173 l are formed together.

The semiconductor material and the metal material may be continuouslydeposited, and then simultaneously patterned to form the first andsecond semiconductors 154 h and 154 l, the first and second data lines171 h and 171 l, the first and second source electrodes 173 h and 173 l,and the first and second drain electrodes 175 h and 175 l. In this case,the first semiconductor 154 h is formed beneath the first data line 171h, and the second semiconductor 154 l is formed beneath the second dataline 171 l.

The first and second gate electrodes 124 h and 124 l, the first andsecond source electrodes 173 h and 173 l, and the first and second drainelectrodes 175 h and 175 l constitute the first and second thin filmtransistors (TFT) Qh and Ql together with the first and secondsemiconductors 154 h and 154 l.

Subsequently, the passivation layer 180 is formed on the first data line171 h, the second data line 171 l, the first source electrode 173 h, thefirst drain electrode 175 h, the first semiconductor 154 h exposedbetween the first source electrode 173 h and the first drain electrode175 h, the second source electrode 173 l, the second drain electrode 175l, and the second semiconductor 154 l exposed between the second sourceelectrode 173 l and the second drain electrode 175 l. The passivationlayer 180 may be formed of the organic insulating material or theinorganic insulating material, and formed of a single layer or amultilayer.

Subsequently, the color filter 230 is formed on the passivation layer180. The color filter 230 may be formed in the first sub-pixel PXa andthe second sub-pixel PXb, but may not be formed in the first valley V1.The color filters 230 having the same color may be formed in a columndirection of a plurality of pixel regions PX. In the case where thecolor filters 230 having three colors are formed, after the color filter230 having a first color is first formed, the color filter 230 having asecond color may be formed by shifting a mask. Subsequently, after thecolor filter 230 having the second color is formed, the color filterhaving a third color may be formed by shifting the mask.

Subsequently, the first insulating layer 240 is formed of the organicinsulating material on the color filter 230.

By patterning the passivation layer 180 and the first insulating layer240, the first contact hole 181 h is formed to extend to and expose atleast a portion of the first drain electrode 175 h and the secondcontact hole 181 l is formed to extend to and expose at least a portionof the second drain electrode 175 l.

As illustrated in FIG. 7, a transparent metal material such as indiumtin oxide (ITO) and indium zinc oxide (IZO) is deposited on the firstinsulating layer 240, and then patterned to form the pixel electrode 191in the pixel region PX. The pixel electrode 191 includes the firstsub-pixel electrode 191 h positioned in the first sub-pixel region PXaand the second sub-pixel electrode 191 l positioned in the secondsub-pixel region PXb. The first sub-pixel electrode 191 h and the secondsub-pixel electrode 191 l may be positioned to be spaced apart from eachother while the first valley V1 is interposed therebetween.

The horizontal stem portions 193 h and 193 l, and the vertical stemportions 192 h and 192 l crossing the horizontal stem portions 193 h and193 l are formed in the first sub-pixel electrode 191 h and the secondsub-pixel electrode 191 l. Further, the plurality of fine branchportions 194 h and 194 l obliquely extending from the horizontal stemportions 193 h and 193 l and the vertical stem portions 192 h and 192 lare formed.

Subsequently, the light blocking member 220 is formed on the pixelelectrode 191 and the first insulating layer 240 by using a materialthat can block light.

The light blocking member 220 is positioned in the first valley V1. Thethin film transistors Qh and Ql are positioned in the first valley V1,and the light blocking member 220 is formed to overlap with the thinfilm transistors Qh and Ql. Moreover, the light blocking member 220 maybe formed to further overlap with the gate line 121 and the storageelectrode line 131. Particularly, the light blocking member 220 isformed to cover the first contact hole 181 h and the second contact hole181 l formed for connection of the thin film transistors Qh and Ql andthe pixel electrode 191.

Subsequently, a sacrificial layer 300 is formed on the pixel electrode191 and the first insulating layer 240. The sacrificial layer 300 may beformed in a column direction. The sacrificial layer 300 may be formed ineach pixel PX and the first valley V1, but may not be formed in thesecond valley V2.

The sacrificial layer 300 includes a photosensitive material, a siloxaneresin, and a reaction group.

The photosensitive material is a material causing a chemical change iflight is irradiated thereon, and is formed of a photosensitive resinsuch as a PAC (photoactive compound), a PAG (photoacid generator), and aphotoinitiator. The photosensitive resin is reacted with light to causea change of dissolution or solidification. The photosensitive resinwhere a polymer at a portion which light reaches is insolubilized and aresist remains is called a negative type photoresist, and thephotosensitive resin where the polymer at the portion which lightreaches is solubilized and the resist is removed is called a positivetype photoresist.

The PAC has the following structure of Chemical Formula 1. Accordingly,the alignment layers 11 and 21 include a sulfur component and a chlorinecomponent.

The siloxane resin and the reaction group have the following structureof Chemical Formula 2. Siloxane has a chain type structure where siliconatoms and oxygen atoms are alternately bonded, and forms a main chain. Areaction group R is bonded to siloxane, and the reaction group R mayform a side chain group. The reaction group R may be formed of an alkylgroup, a methyl group, or the like.

As illustrated in FIG. 8, a transparent metal material such as indiumtin oxide (ITO) and indium zinc oxide (IZO) is deposited on thesacrificial layer 300 to form the common electrode 270.

Subsequently, the second insulating layer 350 may be formed of theinorganic insulating material such as silicon oxide or silicon nitrideon the common electrode 270.

Subsequently, the roof layer 360 is formed by applying the organicmaterial on the second insulating layer 350 and performing patterning.In this case, patterning may be performed to remove the organic materialpositioned in the first valley V1. Accordingly, the roof layer 360 isformed to be connected along the plurality of pixel rows. After the rooflayer 360 is patterned, light is irradiated on the roof layer 360 toperform a curing process. If the curing process is performed, the rooflayer 360 is hardened, so that even though a space is formed beneath theroof layer 360, a shape thereof may be maintained.

Subsequently, the second insulating layer 350 and the common electrode270 are patterned by using the roof layer 360 as the mask to remove thesecond insulating layer 350 and the common electrode 270 positioned inthe first valley V1.

Subsequently, the third insulating layer 370 may be formed of theinorganic insulating material such as silicon nitride (SiNx) and siliconoxide (SiOx) on the roof layer 360. The third insulating layer 370positioned in the first valley V1 is removed by patterning the thirdinsulating layer 370.

The sacrificial layer 300 positioned in the first valley V1 is exposedto the outside by patterning the roof layer 360, the second insulatinglayer 350, the common electrode 270, and the third insulating layer 370.

As illustrated in FIG. 9, the sacrificial layer 300 is removed bysupplying a developing solution, a stripper solution, or the like ontothe substrate 110 in which the sacrificial layer 300 is exposed. Thesacrificial layer 300 is reacted with light in the curing process of theroof layer 360 to be partially altered. Accordingly, a portion of thesacrificial layer 300 remains in the process of removing the sacrificiallayer 300. In this case, a portion of the sacrificial layer 300, whichcomes into contact with the pixel electrode 191, and a portion of thesacrificial layer 300, which comes into contact with the commonelectrode 270, remain.

The sacrificial layer 300 remaining in the process of removing thesacrificial layer 300 becomes the alignment layers 11 and 21. Thesacrificial layer 300 includes materials of the photosensitive material,a main chain, and a side chain group. Since the sacrificial layer 300includes materials of a main chain and a side chain group, thesacrificial layer 300 can control arrangement of liquid crystals.

The alignment layers 11 and 21 include the first alignment layer 11 andthe second alignment layer 21. The first alignment layer 11 may beformed on the pixel electrode 191, and the second alignment layer 21 maybe formed beneath the common electrode 270. The first alignment layer 11and the second alignment layer 21 are formed to face each other whilethe microcavity 305 is interposed therebetween, and are formed to beconnected to each other at the lateral wall of the edge of themicrocavity 305.

In this case, the first and second alignment layers 11 and 21 may bealigned in a direction that is vertical to the substrate 110 with theexception of the lateral surface of the microcavity 305.

In the present exemplary embodiment, a process of injecting the aligningagent may be omitted by using an altered layer of the sacrificial layer300 as the alignment layers 11 and 21, and thus the present exemplaryembodiment may be simplified. Further, an oxygen ashing process forremoving the altered layer of the sacrificial layer 300 may be omittedand thus the present exemplary embodiment may be simplified. Further,since there is no concern about damage to the first insulating layer 240or the light blocking member 220 due to the oxygen ashing process, it isfine not to form an inorganic insulating layer for protecting the firstinsulating layer 240 and the light blocking member 220. Accordingly,like this, a process of forming the inorganic insulating layer may beomitted and thus the present exemplary embodiment may be simplified.Accordingly, the pixel electrode 191 is positioned directly on the firstinsulating layer 240, and the encapsulation layer 390 as will bedescribed later is positioned directly on the light blocking member 220.

If the sacrificial layer 300 is removed, the microcavity 305 is formedat a position in which the sacrificial layer 300 was positioned.

Further, in the case where a process of injecting a separate aligningmaterial is performed in order to form the alignment layers 11 and 21,an agglomeration phenomenon of the alignment layers 11 and 21 occurs ina partial region of the microcavity 305. In the present exemplaryembodiment, the agglomeration phenomenon of the alignment layers 11 and21 may be prevented by forming the sacrificial layer 300 and using aresidual portion after removing the sacrificial layer 300 as thealignment layers 11 and 21.

The pixel electrode 191 and the common electrode 270 are spaced apartfrom each other while the microcavity 305 is interposed therebetween,and the pixel electrode 191 and the roof layer 360 are spaced apart fromeach other while the microcavity 305 is interposed therebetween. Thecommon electrode 270 and the roof layer 360 are formed to cover an uppersurface and both lateral surfaces of the microcavity 305.

Further, the microcavity 305 is exposed to the outside through a portionin which the roof layer 360 and the common electrode 270 are removed,and the portions through which the microcavity 305 is exposed are calledthe injection holes 307 a and 307 b. The two injection holes 307 a and307 b may be formed in one microcavity 305, and for example, the firstinjection hole 307 a which extends to and through which the lateralsurface of the first edge of the microcavity 305 is exposed, and thesecond injection hole 307 b which extends to and through which thelateral surface of the second edge of the microcavity 305 is exposed maybe formed. The first edge and the second edge are the edges facing eachother, and for example, the first edge may be the upper edge of themicrocavity 305 and the second edge may be the lower edge of themicrocavity 305.

As illustrated in FIG. 10, if the liquid crystal material is dripped onthe substrate 110 by an inkjet method or a dispensing method, the liquidcrystal material is injected through the injection holes 307 a and 307 binto the microcavity 305 by capillary force. Accordingly, the liquidcrystal layer formed of the liquid crystal molecules 310 is formed inthe microcavity 305.

Subsequently, the encapsulation layer 390 is formed by depositing amaterial that is not reacted with the liquid crystal molecules 310 onthe third insulating layer 370. The encapsulation layer 390 is formed tocover the injection holes 307 a and 307 b and thus seals the microcavity305 so that the liquid crystal molecules 310 formed in the microcavity305 are not discharged to the outside.

Subsequently, although not illustrated in the drawings, the polarizermay be further attached to the upper and lower surfaces of the displaydevice. The polarizer may be formed of a first polarizer and a secondpolarizer. The first polarizer may be attached to the lower surface ofthe substrate 110 and the second polarizer may be attached onto theencapsulation layer 390.

Hereinafter, in the display device according to the exemplaryembodiment, a characteristic that when the altered layer of thesacrificial layer is used as the alignment layer, a pretilt angle isformed without a separate additional process will be described withreference to FIGS. 11 and 12.

FIG. 11 is a view illustrating the display device where the sacrificiallayer is formed by a general photoresist, and FIG. 12 is a viewillustrating the display device according to the exemplary embodiment.FIGS. 11 and 12 are results obtained by allowing a transmissive axis ofthe first polarizer and a transmissive axis of the second polarizer tovertically cross each other, supplying light of a backlight, andobserving light passing through the display device.

In the case of FIG. 11, since the general photoresist does not have analignment characteristic, the liquid crystal molecules do not face in apredetermined direction. Accordingly, it could be observed that lightsupplied from the backlight goes by the liquid crystal layer andpenetrates as it is.

In the case of FIG. 12, in the display device according to the exemplaryembodiment, since the sacrificial layer is formed of the photoresistincluding the alignment material, the display device has the alignmentcharacteristic. Accordingly, the liquid crystal molecules are aligned tohave a predetermined pretilt angle. First, reviewing a liquid crystalnon-injection region, like FIG. 11, light supplied from the backlightpenetrates as it is. Reviewing the liquid crystal injection region,light does not pass through the liquid crystal layer where alignment isperformed in a predetermined direction, and a black image is displayed.

Next, the display device according to an exemplary embodiment will bedescribed below with reference to FIGS. 13 and 14.

Since the display device according to the exemplary embodimentillustrated in FIGS. 13 and 14 is almost the same as the display deviceaccording to the exemplary embodiment illustrated in FIGS. 1 to 5, adescription thereof will be omitted. The present exemplary embodiment isdifferent from the former exemplary embodiment in that an alignmentlayer is separately formed in addition to the altered layer of thesacrificial layer, and hereinafter, will be described in more detail.

FIGS. 13 and 14 are cross-sectional views illustrating the displaydevice according to the exemplary embodiment. FIGS. 13 and 14 are thecross-sectional views obtained by cutting different portions.

The thin film transistor, the pixel electrode 191 connected thereto, andthe common electrode 270 spaced apart from the pixel electrode 191 whilethe microcavity 305 is interposed therebetween are formed on thesubstrate 110.

The alignment layers 11 and 21 are formed on the pixel electrode 191 andbeneath the common electrode 270.

Unlike the former exemplary embodiment, in the present exemplaryembodiment, the alignment layers 11 and 21 do not include thephotosensitive material. The alignment layers 11 and 21 have a formwhere various kinds of side chain groups are attached to the main chain,and form the pretilts to control arrangement of the liquid crystals. Themain chain may be formed of siloxane, and the side chain group may beformed of a reaction group such as an alkyl group and a methyl group.

The alignment layers 11 and 21 include the first alignment layer 11 andthe second alignment layer 21. The first and second alignment layers 11and 21 may be connected at the lateral wall of the edge of themicrocavity 305.

The first alignment layer 11 is formed on the pixel electrode 191, andthe second alignment layer 21 is formed beneath the common electrode 270to face the first alignment layer 11.

An altered layer 500 is further formed between the pixel electrode 191and the first alignment layer 11, and between the common electrode 270and the second alignment layer 21.

The altered layer 500 includes the photosensitive material. Thephotosensitive material is a material causing a chemical change if lightis irradiated thereon, and is formed of a PAC (photoactive compound), aPAG (photoacid generator), a photoinitiator, or the like. The PAC hasthe following structure of Chemical Formula 1. Accordingly, the alteredlayer 500 includes a sulfur component and a chlorine component.

The liquid crystal layer formed of the liquid crystal molecules 310 isformed in the microcavity 305 positioned between the pixel electrode 191and the common electrode 270, the roof layer 360 is formed on the commonelectrode 270, and the encapsulation layer 390 sealing the microcavity305 is formed on the roof layer 360.

Like the former exemplary embodiment, in the present exemplaryembodiment, since there is little concern about damage to the firstinsulating layer 240 and the light blocking member 220, it is fine notto form the inorganic insulating layer for protecting the firstinsulating layer 240 and the light blocking member 220. Accordingly, thepixel electrode 191 is formed directly on the first insulating layer240, and the light blocking member 220 is positioned directly beneaththe encapsulation layer 390.

Hereinafter, a method of manufacturing the display device according tothe exemplary embodiment will be described below with reference to FIGS.15 to 18. Moreover, a description will be given with reference to FIGS.13 and 14 together.

FIGS. 15 to 18 are process cross-sectional views illustrating the methodof manufacturing the display device according to the exemplaryembodiment.

First, as illustrated in FIG. 15, the thin film transistor is formed onthe substrate 110, and the pixel electrode 191 is formed to be connectedthereto.

The sacrificial layer 300 is formed on the pixel electrode 191. Thesacrificial layer 300 may be formed in a column direction. Thesacrificial layer 300 may be formed in each pixel PX and the firstvalley V1, but may not be formed in the second valley V2.

The sacrificial layer 300 includes the photosensitive material. Unlikethe former exemplary embodiment, in the present exemplary embodiment,the sacrificial layer 300 does not include the siloxane resin and thereaction group.

The photosensitive material is the material causing the chemical changeif light is irradiated thereon, and is formed of the PAC (photoactivecompound), the PAG (photoacid generator), the photoinitiator, or thelike. The PAC has the following structure of Chemical Formula 1.Accordingly, the sacrificial layer 300 includes a sulfur component and achlorine component.

Subsequently, the common electrode 270 is formed on the sacrificiallayer 300, the roof layer 360 is formed on the common electrode 270, andthe roof layer 360 is then cured.

A portion of the sacrificial layer 300 positioned in the first valley V1is exposed to the outside by patterning the roof layer 360 and thecommon electrode 270.

As illustrated in FIG. 16, the sacrificial layer 300 is removed bysupplying the developing solution, the stripper solution, or the likeonto the substrate 110 in which the sacrificial layer 300 is exposed. Ifthe sacrificial layer 300 is removed, the microcavity 305 is formed at aposition in which the sacrificial layer 300 was positioned.

The sacrificial layer 300 is reacted with light in the curing process ofthe roof layer 360 to be partially altered. Accordingly, a portion ofthe sacrificial layer 300 remains in the process of removing thesacrificial layer 300 to become an altered layer 500. The altered layer500 is formed of a portion of the sacrificial layer 300, which is incontact with the pixel electrode 191, and a portion of the sacrificiallayer 300, which is in contact with the common electrode 270. Since thealtered layer 500 includes the components of the sacrificial layer 300,the altered layer 500 includes a sulfur component and a chlorinecomponent.

As illustrated in FIG. 17, if the aligning agent including the aligningmaterial is dripped on the substrate 110 by a spin coating method or aninkjet method, the aligning agent is injected into the microcavity 305.If the curing process is performed after the aligning agent is injectedinto the microcavity 305, a solution component is vaporized, and thealigning material remains on an inner wall surface of the microcavity305 to form the alignment layers 11 and 21.

The alignment layers 11 and 21 include the first alignment layer 11 andthe second alignment layer 21. The first alignment layer 11 may beformed on the pixel electrode 191, and the second alignment layer 21 maybe formed beneath the common electrode 270. The first alignment layer 11and the second alignment layer 21 are formed to face each other whilethe microcavity 305 is interposed therebetween, and are formed to beconnected to each other at the lateral wall of the edge of themicrocavity 305.

The altered layer 500 is positioned between the pixel electrode 191 andthe first alignment layer 11, and between the common electrode 270 andthe second alignment layer 21.

In the present exemplary embodiment, the oxygen ashing process forremoving the altered layer of the sacrificial layer 300 may be omittedand thus the present exemplary embodiment may be simplified by formingthe alignment layers 11 and 21 without removing the altered layer 500 ofthe sacrificial layer 300. Further, since there is no concern aboutdamage to the first insulating layer 240 or the light blocking member220 due to the oxygen ashing process, it is fine not to form theinorganic insulating layer for protecting the first insulating layer 240and the light blocking member 220. Accordingly, like this, the processof forming the inorganic insulating layer may be omitted and thus thepresent exemplary embodiment may be simplified. Accordingly, the pixelelectrode 191 is positioned directly on the first insulating layer 240,and the encapsulation layer 390 as will be described later is positioneddirectly on the light blocking member 220.

As illustrated in FIG. 18, if the liquid crystal material is dripped onthe substrate 110, the liquid crystal material is injected into themicrocavity 305, and the liquid crystal layer formed of the liquidcrystal molecules 310 is formed.

Subsequently, the microcavity 305 is sealed by forming the encapsulationlayer 390 on the roof layer 360.

While the inventive concept has been described in connection with whatis presently considered to be practical exemplary embodiments, it is tobe understood that the inventive concept is not limited to the disclosedembodiments, but, on the contrary, is intended to cover variousmodifications and equivalent arrangements included within the spirit andscope of the appended claims.

DESCRIPTION OF SYMBOLS

11: First alignment layer 21: Second alignment layer 110: Substrate 121:Gate line 124h: First gate electrode 124l: Second gate electrode 131:Storage electrode line 133, 135: Storage electrode 140: Gate insulatinglayer 154h: First semiconductor 154l: Second semiconductor 171: Dataline 171h: First data line 171l: Second data line 173h: First sourceelectrode 173l: Second source electrode 175h: First drain electrode175l: Second drain electrode 180: Passivation layer 181h: First contacthole 181l: Second contact hole 191: Pixel electrode 220: Light blockingmember 230: Color filter 240: First insulating layer 270: Commonelectrode 300: Sacrificial layer 305: Microcavity 307a, 307b: Injectionhole 310: Liquid crystal molecule 350: Second insulating layer 360: Rooflayer 370: Third insulating layer 390: Encapsulation layer 500: Alteredlayer

What is claimed is:
 1. A display device comprising: a substrate; a thinfilm transistor on the substrate; a pixel electrode connected to thethin film transistor; a common electrode on the pixel electrode to bespaced apart from the pixel electrode while a plurality of microcavitiesare interposed between the common electrode and the pixel electrode; aroof layer on the common electrode; an alignment layer on the pixelelectrode and beneath the common electrode and including aphotosensitive material; a liquid crystal layer filling themicrocavities; an encapsulation layer on the roof layer to seal themicrocavities; a color filter positioned beneath the pixel electrode;and an insulation layer between the color filter and the pixel electrodeand formed of an organic insulating material, wherein the pixelelectrode is directly on the insulating layer.
 2. The display device ofclaim 1, wherein: the alignment layer further includes a siloxane resin.3. The display device of claim 2, wherein: the photosensitive materialis formed of at least any one of a PAC (photoactive compound), a PAG(photoacid generator), and a photoinitiator.
 4. The display device ofclaim 3, wherein: the alignment layer includes a sulfur component and achlorine component.
 5. The display device of claim 1, furthercomprising: a light blocking member between the plurality ofmicrocavities, wherein the light blocking member is positioned directlybeneath the encapsulation layer.
 6. The display device of claim 5,wherein: the light blocking member is positioned on the pixel electrodeand the insulating layer.
 7. A display device comprising: a substrate; athin film transistor on the substrate; a pixel electrode connected tothe thin film transistor; a common electrode on the pixel electrode tobe spaced apart from the pixel electrode while a plurality ofmicrocavities are interposed between the common electrode and the pixelelectrode; a roof layer on the common electrode; an alignment layer onthe pixel electrode and beneath the common electrode; an altered layerbetween the pixel electrode and the alignment layer and between thecommon electrode and the alignment layer; a liquid crystal layer fillingthe microcavities; and an encapsulation layer on the roof layer to sealthe microcavities.
 8. The display device of claim 7, further comprising:a color filter positioned beneath the pixel electrode; and an insulatinglayer between the color filter and the pixel electrode and formed of anorganic insulating material, wherein the pixel electrode is directly onthe insulating layer.
 9. The display device of claim 8, furthercomprising: a light blocking member between the plurality ofmicrocavities, wherein the light blocking member is positioned directlybeneath the encapsulation layer.